SCAPS-1D Simulation and Electrodeposition of Molybdenum Disulfide and Zinc Selenide for Optoelectronic Applications.

Abstract

In this research work, ZnSe/MoS2 based photovoltaic device were simulated using SCAPS simulation for the materials reproducibility in the laboratory. Having achieved the simulated materials, the materials were synthesized on a well-degreased Fluorine doped Tin Oxide substrates using simple, fast, and inexpensive 2-electrode configuration Electrodeposition (ED) technique. The optical properties and electrical conductivity of the film of ZnSe and MoS2 were determined. The grown heterostructured ZnSe/MoS2 on FTO substrate was numerically modeled by utilizing the experimentally obtained optical parameters in the SCAPS simulator for the extraction of the hetero structured device electrical parameters heterostructured based photovoltaic device. In the fabrication of photovoltaic cells, n-type ZnSe was first deposited on FTO using ED and heat-treated for 20 minutes in an oven furnace at temperature of 4000C before immersing it into the solution containing the bath of MoS2. The deposited structure of ZnSe formed a junction with MoS2 using electrodeposition. The variation of substrate temperature which have an influence on the electrical parameters of the heterostructured based photovoltaic device was examined